Silicon carbide ceramic EBSD samples preparation
Silicon carbide (SiC) ceramics feature outstanding thermal conductivity, high-temperature resistance, wear and corrosion resistance, widely adopted in semiconductor manufacturing, new-energy PV, aerospace thermal protection and high-temperature metallurgy. Their service performance is dominated by grain morphology, grain boundary conditions and residual stress.
EBSD serves as an essential characterization method to analyze grain orientation, texture and micro-defects of SiC. Reliable EBSD data guides sintering optimization and avoids component failure. Precise specimen preparation determines EBSD indexing success for hard & brittle SiC ceramics. Standard sandpapers fail grinding; diamond discs plus vibratory polishing are required.
Our SiC EBSD Prep Procedure:
1️⃣ Rough grinding with P400 diamond disc for planarization
2️⃣ Fine grinding: POS pad + 9μm PD-WT diamond suspension
3️⃣ Rough polishing: SC-JP cloth + 3μm PD-WT suspension
4️⃣ Intermediate polishing: ZN-ZP cloth + AO-A439 suspension
5️⃣ Final vibratory polishing: ZN-ZP cloth + AO-A439 suspension
