SiC Ceramics

Purpose：Prepare a polished SiC ceramic sample. Silicon carbide ceramics exhibit low thermal expansion coefficient, high specific strength, high thermal conductivity, high hardness, excellent wear resistance, low friction coefficient, corrosion resistance, and most importantly, maintain superior performance at temperatures up to 1650°C. These properties make SiC ceramics one of the most widely used structural ceramics. The sample undergoes cutting (TableCut200), mounting (TJ2568 cold-mounting resin), grinding/polishing (Alpha610), and microstructure observation (MN80 metallographic microscope).

Basic Guide：

Cutting：1.Choose DR resin bond diamond cutting blades, and refer to the Trojan’s Cutting Guide for specific model selection.

2.Due to the hardness and brittleness of ceramics, pulse mode is selected for cutting, and it is recommended that the maximum cutting speed be ≤ 0.2mm/s.

Mounting：Use high hardness cold/hot inlay resin for mounting.

Grinding：1.Use resin diamond grinding discs starting from P400 until the sample surface is plane and cutting-induced damage is fully removed.

2.Continue with P1500 and P4000 resin diamond discs.

3.Sharpen resin bond diamond discs with a dressing stone before use.

Polishing：1.Clean the polishing cloth, sample holder, and hands before starting. Repeat cleaning after each polishing step.

2.Do not mix discs with different abrasive sizes.

3.Use alcohol and a blower to clean and dry the sample surface. Note: Do not clean surfaces polished with silica polishing fluid using alcohol, as it may cause residue adhesion.

4.After each step, check under a metallographic microscope to ensure scratch size matches the abrasive grit and that scratches are randomly oriented.

5.Rinse polishing cloths thoroughly with running water and a soft brush, then air-dry.

6.If surface relief is severe, re-grind with the final grit and repeat polishing, while reducing the time for silica + ZN polishing.